SiC wafer


 

Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC.SiC is a Ⅳ-Ⅳ compound semiconductor material, with a variety Allotropic. The typical structure of which is divided into two types, first type is sphalerite crystal structure as 3C-SiC (β-SiC),second type is wurtzite hexagonal crystal structure ; typically a 6H-SiC, 4H-SiC and 15R-SiC known as α-SiC. The most commonly used in the semiconductor industry are 4H-SiC and 6H-SiC structures.

There are some advantages for SiC:
–Current density can easily reach 5 or even 10 A/mm² (less than 1 A/mm² for silicon)
–Breakdown voltage (Volt/μm of epilayer) is typically in the 100 V/μm range for SiC, compared to 10 V/μm for silicon
–A single SiC device will drive higher current and voltage in a reduced foot-print.
–SiC is intrinsically very thermally conductive. Where a Silicon device will have to be cooled down to not exceed 85°C, a similar SiC device will operate at 250°C with no degradation. This robustness to higher operation temperture will allow cost savings at system or module level where the cooling features (air, water, fans, heat sinks…) will be considerably reduced and shrunk.
•Higher electron mobility of SiC also permits higher frequency operation in switching mode.

Latentek can pervide high quality single crystalline Silicon carbide wafer.Furthermore we provide two forms of wafer : semi-insulating and conductive as to meet the customer needs of high-frequency components and high power components. Current technical ability is able to pervide 1MPD specifications of the wafer.

(一) SiC Wafer Specification

 

4 inch SiC Wafer Specification (4H-SiC)

Substrate Properties

Standard Specification

Grade

Grade I

Grade II

Diameter

100.0mm +0/-0.05

Thickness

350μm /500μm ±25μm

Dopant

N type: nitrogen

Primary Flat Orientation

Perpendicular to <11-20> ±5.0°

Primary Flat Length

32.5mm ±2.0mm

Secondary Flat Orientation

90° CW from Primary flat ±5.0°

Secondary Flat Length

18.0mm ±2.0mm

Surface Orientation On Axis

{0001} ±0.25°

Surface Orientation Off Axis

4.0° toward <11-20> ±0.5°

Surface Finish

Both polish (Si-face: Rq <0.2nm)

Edge Exclusion

2.0mm

TTV / Warp

< 15μm / < 45μm

Resistivity

Conductive

0.01~0.05 Ω.cm

Semi-insulating

>  105Ω.cm

MPD

< 5 cm²

< 50 cm²

 

3 inch SiC Wafer Specification (4H-SiC & 6H-SiC)

Substrate Properties

Standard Specification

Grade

Grade 1

Grade II

Diameter

 76.2mm ±0.38mm

Thickness

350μm ±25μm

Dopant

N type: nitrogen

Primary Flat Orientation

Perpendicular to <11-20> ±5.0°

Primary Flat Length

22.2mm ±3.17mm

Secondary Flat Orientation

90° CW from Primary flat ±5.0°

Secondary Flat Length

11.18mm ±1.52mm

Surface Orientation On Axis

{0001} ±0.25°

Surface Orientation Off Axis

4.0° toward <11-20> ±0.5°

Surface Finish

Both polish (Si-face: Rq <0.2nm)

Edge Exclusion

2.0mm

TTV / Warp

< 15μm / < 35μm

Resistivity

Conductive

0.01~0.05 Ω.cm

Semi-insulating

> 105 Ω.cm

MPD

< 5 cm²

< 50 cm²

 

2 inch SiC Wafer Specification (4H-SiC & 6H-SiC)

Substrate Properties

Standard Specification

Grade

Grade 1

Grade II

Diameter

 50.8mm ±0.38mm

Thickness

350μm / 430μm ±25μm

Dopant

N type: nitrogen

Primary Flat Orientation

Perpendicular to <11-20> ±5.0°

Primary Flat Length

22.2mm ±3.17mm

Secondary Flat Orientation

90° CW from Primary flat ±5.0°

Secondary Flat Length

11.18mm ±1.52mm

Surface Orientation On Axis

{0001} ±0.25°

Surface Orientation Off Axis

4.0° toward <11-20> ±0.5°

Surface Finish

Both polish (Si-face: Rq <0.2nm)

Edge Exclusion

1.0mm

TTV / Warp

< 15μm / < 25μm

Resistivity

Conductive

0.01~0.1 Ω.cm

 

Semi-insulating

> 105 Ω.cm

MPD

< 5 cm²

< 30 cm²

(二) Photo Gallery of our product
3 inch SiC crystal 4 inch SiC crystal

4 inch SiC wafer (N doped) 4 inch SiC wafer (V doped)

6 inch SiC wafer (N doped) 6 inch SiC wafer (V doped)