碳化矽單晶片( SiC Wafer)


 

SiC是一種Ⅳ-Ⅳ族化合物半導體材料,具有多種同素異型結構。其中典型結構分為兩類,一類為類鑽石的閃鋅礦晶體結構3C-SiC (β-SiC),另一類為類纖鋅礦的六方晶體結構;典型的有6H-SiC、4H-SiC及15R-SiC稱為α-SiC。其中又以4H-SiC和6H-SiC兩種在半導體領域最常使用。SiC元件提供了較高的電流密度,SiC電流密度可輕鬆達到5甚至10 A /mm²,相較於Si的電流則是低於1A/ mm²和較高的崩潰電壓( SiC:100 V/μm、 Si: 10 V/μm)。6H-SiC和4H-SiC最大的差異在於4H-SiC的電子遷移率是6H-SiC的兩倍,這是因為4H-SiC有較高的水平轴(a-axis)移動率。

SiC材料相較於傳統半導體元件材料Si而言具有較寬的能隙(SiC:2.9eV、Si:1.1eV)及高溫穩定性(Si的工作溫度不高於85ºC,而SiC晶片卻可以在250°C仍維持一樣的效能)以及良好熱導率等特性,使得SiC適合製作成在高溫、高壓、高頻、高功率及光電等電子元件領域應用,以及適用於航空航太系統、軍用武器系統及石油探勘、核能等極端環境領域應用優勢。

磊拓科技代理的高品質SiC單晶片具有高規格及品質穩定的特色,並且能夠提供semi-insulating以及conductive兩種形式;滿足高頻元件以及高功率元件的需求。目前的技術能力,能夠出貨1MPD規格的晶片。

(一) 碳化矽晶圓產品規格( SiC Wafer Specification)

 

4 inch SiC Wafer Specification (4H-SiC)

Substrate Properties

Standard Specification

Grade

Grade I

Grade II

Diameter

100.0mm +0/-0.05

Thickness

350μm /500μm ±25μm

Dopant

N type: nitrogen

Primary Flat Orientation

Perpendicular to <11-20> ±5.0°

Primary Flat Length

32.5mm ±2.0mm

Secondary Flat Orientation

90° CW from Primary flat ±5.0°

Secondary Flat Length

18.0mm ±2.0mm

Surface Orientation On Axis

{0001} ±0.25°

Surface Orientation Off Axis

4.0° toward <11-20> ±0.5°

Surface Finish

Both polish (Si-face: Rq <0.2nm)

Edge Exclusion

2.0mm

TTV / Warp

< 15μm / < 45μm

Resistivity

Conductive

0.01~0.05 Ω.cm

Semi-insulating

>  105Ω.cm

MPD

< 5 cm²

< 50 cm²

 

3 inch SiC Wafer Specification (4H-SiC & 6H-SiC)

Substrate Properties

Standard Specification

Grade

Grade 1

Grade II

Diameter

 76.2mm ±0.38mm

Thickness

350μm ±25μm

Dopant

N type: nitrogen

Primary Flat Orientation

Perpendicular to <11-20> ±5.0°

Primary Flat Length

22.2mm ±3.17mm

Secondary Flat Orientation

90° CW from Primary flat ±5.0°

Secondary Flat Length

11.18mm ±1.52mm

Surface Orientation On Axis

{0001} ±0.25°

Surface Orientation Off Axis

4.0° toward <11-20> ±0.5°

Surface Finish

Both polish (Si-face: Rq <0.2nm)

Edge Exclusion

2.0mm

TTV / Warp

< 15μm / < 35μm

Resistivity

Conductive

0.01~0.05 Ω.cm

Semi-insulating

> 105 Ω.cm

MPD

< 5 cm²

< 50 cm²

 

2 inch SiC Wafer Specification (4H-SiC & 6H-SiC)

Substrate Properties

Standard Specification

Grade

Grade 1

Grade II

Diameter

 50.8mm ±0.38mm

Thickness

350μm / 430μm ±25μm

Dopant

N type: nitrogen

Primary Flat Orientation

Perpendicular to <11-20> ±5.0°

Primary Flat Length

22.2mm ±3.17mm

Secondary Flat Orientation

90° CW from Primary flat ±5.0°

Secondary Flat Length

11.18mm ±1.52mm

Surface Orientation On Axis

{0001} ±0.25°

Surface Orientation Off Axis

4.0° toward <11-20> ±0.5°

Surface Finish

Both polish (Si-face: Rq <0.2nm)

Edge Exclusion

1.0mm

TTV / Warp

< 15μm / < 25μm

Resistivity

Conductive

0.01~0.1 Ω.cm

 

Semi-insulating

> 105 Ω.cm

MPD

< 5 cm²

< 30 cm²

(二) 碳化矽晶圓實體展示
3 inch碳化矽晶體 4 inch 碳化矽晶體

4 inch 碳化矽單晶片(N摻雜) 4 inch 碳化矽單晶片(V摻雜)

6 inch 碳化矽單晶片(N摻雜) 6 inch 碳化矽單晶片(V摻雜)