碳化矽磊晶片( SiC Epitaxial Wafer)


 

碳化矽磊晶片應用於多種電子零件,例如:肖特基二極管(Shockley diode)、金屬氧化物半導體場效應電晶體(MOSFET)、結型場效應電晶體(JFET)、雙極性電晶體(BJT)、晶閘管(Thyristor)、可關斷晶閘管(GTO)和絕緣柵雙極型電晶體(IGBT)。請參閱我們4"~6"碳化矽之規格,或連繫我們

(一) 碳化矽磊晶片標準規格 (100mm & 76.2mm)

Substrate orientation : Epitaxy is only available for off-axis substrates
Dopping
  n-type p-type
Dopant Nitrogen Aluminum
Net Doping Density ND-NA NA-ND
Silicon Face 9E14~1E19cm-3 9E14~1E19cm-3
Tolerance ±15%(Spec.) ±7%(Tipical) ±50%(Spec.) ±25%(Tipical)
Uniformity ≦10%(Spec.) ≦7%(Tipical) ≦20%(Spec.) ≦10%(Tipical)
Thickness:0.2~50µm
     
Tolerrance ±10% ±5%
Uniformity ≦10% ≦3%

(二) 碳化矽磊晶片產品規範

Characteristics Acceptable Limits Definitions Test Methods
Epi Defects 2mm*2mm die yield>90% Defects only inculde trianglar defects, downfails,carrots and comets. candela CS20 automatic wafer inspection.
The die yield is calculated by 2mm*2mm grid.
Edge Chips 2 with radius 1.5mm Areas where material has been unintentionally removed from the wafer inspection perforned under diffuse illumination
Scratches 10 lines total<1*wafer diameter Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater that 5:1
Surface Roughness <0.3mm 20µm*20µm scan by AFM
Backsidbe Cleanliness 100% clean Verified by inspecting for a uniform color to the wafer backside.
Thickness see specification table thickness is determined as an average value across the wafer by FTIR FTIR
Net dopping see specification table Net doping  is determined as an average value across the wafer by Hg probe CV. Hg probe CV

 

(三) 碳化矽磊晶片厚度均勻性分布圖

mean value(µm): 12.04
sigma/mean: 1.28%
(max-min)/(max+min): 3.04%

(四) 碳化矽磊晶片摻雜均勻性分布圖

mean value(cm-3): 7.9515
sigma/mean: 3.48%
(max-min)/(max+min): 9.97%